Stoichiometry in epitaxial oxide thin films

The functional properties of complex transition metal oxides are very sensitive on the details of the electronic structure and are thereby strongly influenced by the elemental composition, the presence of defects, or lattice distortions. Therefore, the precise control over the stoichiometry is one of the key challenges for the oxide thin film growth community. In this book chapter, we will address in detail the different physical mechanisms that impact both, oxygen and cation, stoichiometry of thin films grown by physical vapor deposition. We will furthermore show how nonstoichiometry can be accommodated in the metal oxide lattice and will give an overview over the impact of growth-induced nonstoichiometry on the functional properties of transition metal oxide thin films and heterostructures.