The effects induced by radiation on an innovative photo-sensor consisting of Single-Photon Avalanche Diodes arrays, implemented in a 150-nm CMOS technology, are presented. Samples were irradiated with a proton beam at different doses, and the impact of radiation-induced damage on the performance of the devices in terms of Dark Count Rate has been estimated. Furthermore, possible methods to reduce the impact of radiation-induced damage are discussed.
Radiation induced degradation in a 150-nm CMOS SPADs device
E. Sarnelli
2020
Abstract
The effects induced by radiation on an innovative photo-sensor consisting of Single-Photon Avalanche Diodes arrays, implemented in a 150-nm CMOS technology, are presented. Samples were irradiated with a proton beam at different doses, and the impact of radiation-induced damage on the performance of the devices in terms of Dark Count Rate has been estimated. Furthermore, possible methods to reduce the impact of radiation-induced damage are discussed.File in questo prodotto:
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