P-channel power MOSFETs working in Linear Zone: Theoretical and experimental studies and comparison with N-channel devices

This paper implements a theoretical study and shows experimental results achieved on P-channel power MOSFETs working in Linear Zone. Typically, these kinds of analysis were performed considering N-channel transistors but never on P-channel. To better evaluate P-channel power MOSFET performances when working in Linear Zone a comparison with comparable N-channel transistors were performed. Experimental results show that P-channel is more thermal stable than N-channel devices and successfully can be proposed in these kinds of operating conditions for dedicated applications, especially in automotive markets. © VDE VERLAG GMBH.