This paper studies the effects of proton irradiations on Super Junction High Voltage power MOSFETs to realize transistors with fast diode. Experiments were performed on a sample of 600V power MOSFETs and achieved results were compared to standard irradiated devices by electrons
Proton Irradiation on SJ HV Power MOSFETs to Realize Fast Diode Devices
Giuseppe Consentino;
2014
Abstract
This paper studies the effects of proton irradiations on Super Junction High Voltage power MOSFETs to realize transistors with fast diode. Experiments were performed on a sample of 600V power MOSFETs and achieved results were compared to standard irradiated devices by electronsFile in questo prodotto:
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Advances in Electrical Engineering - 2014 - Bertuglia - Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode.pdf
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