High voltage power transistors used in inverters for photovoltaic panels and avionic applications are naturally exposed to Terrestrial Cosmic Rays, or Atmospheric Neutrons, which are known to induce catastrophic failures such as burnouts or gate ruptures. Accelerated tests on different power MOSFETs and IGBTs technologies were performed in ANITA neutron facility, at Uppsala, Sweden. Experimental details and results will be presented and discussed. © 2014 IEEE.
Effects on power transistors of Terrestrial Cosmic Rays: Study, experimental results and analysis
Consentino G.;
2014
Abstract
High voltage power transistors used in inverters for photovoltaic panels and avionic applications are naturally exposed to Terrestrial Cosmic Rays, or Atmospheric Neutrons, which are known to induce catastrophic failures such as burnouts or gate ruptures. Accelerated tests on different power MOSFETs and IGBTs technologies were performed in ANITA neutron facility, at Uppsala, Sweden. Experimental details and results will be presented and discussed. © 2014 IEEE.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
Effects_on_power_transistors_of_Terrestrial_Cosmic_Rays_Study_experimental_results_and_analysis.pdf
non disponibili
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
1.05 MB
Formato
Adobe PDF
|
1.05 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
