This technical article explains the thermal instability condition of a power MOSFET while it operates in linear mode considering an innovative approach. In particular, it studies the phenomenon evaluating the failure time when a drain current focusing process occurs or, simply, it evaluates the die localized increased temperature due to a hot spot creation even if no failure occurs. A theoretical model is implemented and validated by specific experimental tests. © 2010 IEEE.
A new approach to establish the thermal instability condition and the failure time during the drain current focusing process in a power MOSFET working in linear zone
Consentino G.
2010
Abstract
This technical article explains the thermal instability condition of a power MOSFET while it operates in linear mode considering an innovative approach. In particular, it studies the phenomenon evaluating the failure time when a drain current focusing process occurs or, simply, it evaluates the die localized increased temperature due to a hot spot creation even if no failure occurs. A theoretical model is implemented and validated by specific experimental tests. © 2010 IEEE.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
