This paper studies and analyzes the integrated temperature sensor of a LV power MOSFET SAFeFETTM device from STMicroelectronics (STZ150NF55T). The paper also shows a typical example of an application where this kind of device can be considered: a fan controller electrical system. For this case, the paper suggests a design example of how achieve a device shutdown event if the junction temperature reaches its maximum guaranteed value. Finally, an evaluation of the error in the junction temperature reading under different thermal conditions is performed to complete the analysis
Power MOSFET with integrated poly-silicondiode to monitor junction temperature, with simplified external electrical shutdown circuit to prevent thermal runaway
Giuseppe Consentino;
2009
Abstract
This paper studies and analyzes the integrated temperature sensor of a LV power MOSFET SAFeFETTM device from STMicroelectronics (STZ150NF55T). The paper also shows a typical example of an application where this kind of device can be considered: a fan controller electrical system. For this case, the paper suggests a design example of how achieve a device shutdown event if the junction temperature reaches its maximum guaranteed value. Finally, an evaluation of the error in the junction temperature reading under different thermal conditions is performed to complete the analysisFile in questo prodotto:
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