This paper presents a theoretical study on power MOSFETs working in commutation mode, in order to evaluate the switching time and the commutation power losses, considering the internal properties of the devices and the external conditions. We propose a mathematical model that can be useful for the application design engineer to evaluate the dynamics of the system and to choose the right transistor for the specific application. In particular, in order to validate the model, a series of experimental tests are implemented on resistive and inductive loads and on low voltage power MOSFET transistors by STMicroelectronics
Power MOSFET working in switching mode:study and analysis of the device's switching time considering different operating conditions
Giuseppe Consentino;
2009
Abstract
This paper presents a theoretical study on power MOSFETs working in commutation mode, in order to evaluate the switching time and the commutation power losses, considering the internal properties of the devices and the external conditions. We propose a mathematical model that can be useful for the application design engineer to evaluate the dynamics of the system and to choose the right transistor for the specific application. In particular, in order to validate the model, a series of experimental tests are implemented on resistive and inductive loads and on low voltage power MOSFET transistors by STMicroelectronicsFile in questo prodotto:
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