Tim paper implements a theoretical study on power MOSFETs internal capacitances. To simulate these capacitances the paper takes into consideration the internal structures of the power MOSFETs, materials and process characteristics. Finally, real measures are implemented on a power MOSFET device by ST and are compared to the simulated data to validate the model. © 2008 IEEE.
A simplified and approximate power MOSFET intrinsic capacitance simulation: Theoretical studies, measures and comparisons
Consentino G.;
2008
Abstract
Tim paper implements a theoretical study on power MOSFETs internal capacitances. To simulate these capacitances the paper takes into consideration the internal structures of the power MOSFETs, materials and process characteristics. Finally, real measures are implemented on a power MOSFET device by ST and are compared to the simulated data to validate the model. © 2008 IEEE.File in questo prodotto:
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