A novel, low temperature process for the growth of silicon nanowires containing a monocrystalline Si-BC8 phase is presented. Silicon atoms in Si-BC8 phase are arranged in body-centered-cubic unit cells resulting into a different energy-wavefactor diagram compared to the silicon diamond cubic phase. Indeed, Si-BC8 possesses a direct band gap as low as 30 meV at room temperature. These characteristics are highly desirable for a large variety of applications, requiring CMOS-compatible manufacturing. The growth was performed in a CVD reactor under exposure to microwaves, and employing Sn nanospheres and SiH4 as catalyst and precursor gas, respectively. Microwaves allowed for selective heating of the metal catalyst while keeping the substrate at low temperature. Systematic structural analysis and a phenomenological model for Si-BC8 phase formation are discussed.
Large-Scale CMOS-Compatible Process for growing Si-BC8 Nanowires
Quaranta S.;
2020
Abstract
A novel, low temperature process for the growth of silicon nanowires containing a monocrystalline Si-BC8 phase is presented. Silicon atoms in Si-BC8 phase are arranged in body-centered-cubic unit cells resulting into a different energy-wavefactor diagram compared to the silicon diamond cubic phase. Indeed, Si-BC8 possesses a direct band gap as low as 30 meV at room temperature. These characteristics are highly desirable for a large variety of applications, requiring CMOS-compatible manufacturing. The growth was performed in a CVD reactor under exposure to microwaves, and employing Sn nanospheres and SiH4 as catalyst and precursor gas, respectively. Microwaves allowed for selective heating of the metal catalyst while keeping the substrate at low temperature. Systematic structural analysis and a phenomenological model for Si-BC8 phase formation are discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
