A theoretical approach taking into consideration the semiconductor-ferroelectric properties of n-doped BaTiO3 ceramics was used for describing the resistivity-temperature dependence over a large range of temperatures. A limited range of the donor composition for which the material exhibits a semiconductive behavior at room temperature is obtained from the model, as experimental data reported in literature show. Resistivity-temperature curves for various model parameters were simulated and the role of donor density and surface state energy in determining the positive temperature coefficient of resistivity (PTCR) parameters were obtained and discussed in connection with the processing parameters.
Simulation of positive temperature coefficient of resistivity (PTCR) behaviour in n-doped BaTiO3 ceramics
Viviani M;
2002
Abstract
A theoretical approach taking into consideration the semiconductor-ferroelectric properties of n-doped BaTiO3 ceramics was used for describing the resistivity-temperature dependence over a large range of temperatures. A limited range of the donor composition for which the material exhibits a semiconductive behavior at room temperature is obtained from the model, as experimental data reported in literature show. Resistivity-temperature curves for various model parameters were simulated and the role of donor density and surface state energy in determining the positive temperature coefficient of resistivity (PTCR) parameters were obtained and discussed in connection with the processing parameters.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
