This experimental study focuses on the reversible threshold voltage shift (ΔVT) observed in SiC power MOSFETs. A positive gate bias causes a positive ΔVT, which can be fully recovered by applying a zero or a small negative voltage. This fully recoverable ΔVT behavior is ascribed to the trapping and de-trapping of electrons from the SiC layer into the pre-existing interface or oxide border traps and vice versa.
ON THE REVERSIBLE THRESHOLD VOLTAGE SHIFT IN SIC POWER MOSFETs
Giuseppe Consentino;
2019
Abstract
This experimental study focuses on the reversible threshold voltage shift (ΔVT) observed in SiC power MOSFETs. A positive gate bias causes a positive ΔVT, which can be fully recovered by applying a zero or a small negative voltage. This fully recoverable ΔVT behavior is ascribed to the trapping and de-trapping of electrons from the SiC layer into the pre-existing interface or oxide border traps and vice versa.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
