The problem of crystal damage recovery and of impurity substitution in implanted semiconductors is considered from a statistical mechanical viewpoint. This is done by resorting to a thermodynamic pseudo-potential originally developed for cooperative structural rearrangements in disordered systems close to their glass transition. The dependence of the substitutional fraction φ on the post-implantation annealing temperature Tann in Al/4H-SiC systems is discussed in the light of these ideas. After completion of the annealing process, an Arrhenius plot of φ(Tann ) shows a slope in the order of 1 eV or less, depending on the amount of lattice damage initially produced by the implantation. Slopes ~4 eV are found after incomplete annealing, indicating that substitution occurs mainly in damaged crystal cells. These concepts are suggested to be used for optimization of the doping procedure by ion implantation.
Evolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC Systems
Boldrini V.;Pieruccini M.
2024
Abstract
The problem of crystal damage recovery and of impurity substitution in implanted semiconductors is considered from a statistical mechanical viewpoint. This is done by resorting to a thermodynamic pseudo-potential originally developed for cooperative structural rearrangements in disordered systems close to their glass transition. The dependence of the substitutional fraction φ on the post-implantation annealing temperature Tann in Al/4H-SiC systems is discussed in the light of these ideas. After completion of the annealing process, an Arrhenius plot of φ(Tann ) shows a slope in the order of 1 eV or less, depending on the amount of lattice damage initially produced by the implantation. Slopes ~4 eV are found after incomplete annealing, indicating that substitution occurs mainly in damaged crystal cells. These concepts are suggested to be used for optimization of the doping procedure by ion implantation.File | Dimensione | Formato | |
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