Tunneling current induced luminescence (TCIL) spectra of capped InGaAs quantum dots (QD) are presented. In contrast to the inhomogeneously broadened photoluminescence, the TCIL shows sharp excitonic lines of typical widths of 1.5-2 meV. Due to the high spatial resolution afforded by using a scanning tunneling microscope tip, TCIL spectra have been measured at various spatial locations on a capped QD sample. It is proposed that the measured luminescence spectra are of a single QD, a pair of coupled QDs and an ensemble of QDs.

Luminescence following highly localized hole carrier injection into ingaas quantum dots

Lomascolo M;Taurino A;Catalano M;Passaseo A;
2002

Abstract

Tunneling current induced luminescence (TCIL) spectra of capped InGaAs quantum dots (QD) are presented. In contrast to the inhomogeneously broadened photoluminescence, the TCIL shows sharp excitonic lines of typical widths of 1.5-2 meV. Due to the high spatial resolution afforded by using a scanning tunneling microscope tip, TCIL spectra have been measured at various spatial locations on a capped QD sample. It is proposed that the measured luminescence spectra are of a single QD, a pair of coupled QDs and an ensemble of QDs.
2002
Istituto di Nanotecnologia - NANOTEC
Istituto per la Microelettronica e Microsistemi - IMM
quantum dot; luminescence; single dot spectroscopy; scanning tunneling microscopy
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/52496
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 2
social impact