Hard breakdown (HBD) is shown to be a gradual process with the gate current increasing at a predictable rate exponentially dependent on the instantaneous stress voltage and oxide thickness. This is contrary to conventional wisdom that maintains that HBD is a fast thermally driven process. The HBD degradation rate (DR) for a 1.5 nm oxide scales from 1 mA/s at 4 V to 1 nA/s at 2 V, extrapolating to 10 fA/s at use voltage. Adding the HBD evolution time to the standard time-to-breakdown potentially reduces the projected fail rate of gate dielectrics by orders of magnitude.
Voltage dependence of hard breakdown growth and the reliability implication in thin devices
2002
Abstract
Hard breakdown (HBD) is shown to be a gradual process with the gate current increasing at a predictable rate exponentially dependent on the instantaneous stress voltage and oxide thickness. This is contrary to conventional wisdom that maintains that HBD is a fast thermally driven process. The HBD degradation rate (DR) for a 1.5 nm oxide scales from 1 mA/s at 4 V to 1 nA/s at 2 V, extrapolating to 10 fA/s at use voltage. Adding the HBD evolution time to the standard time-to-breakdown potentially reduces the projected fail rate of gate dielectrics by orders of magnitude.File in questo prodotto:
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