Leveraging Design and Technology of the Sb2S3/Au Surface Plasmon Enhanced Hot-Electron Schottky Detectors for Telecom Wavelength Bands Applications

The present paper evaluates two possible fabrication technologies of the IR surface plasmon-enhanced hot electron Schottky detectors (SP-HESD) as a function of their critical process parameter (grating spacing) and absorbance performance. The first-one is defined by metal film at the top, (Au/Sb2S3) and the second one by the Sb2S3 film at the top (Sb2S3/Au). Considering the nanolithography requirements and the associated design and simulation results, it is demonstrated that for a spacing of 60 nm between metal fingers, a good leverage between performances and technological realizability is obtained for the Sb2S3/Au technology. In addition, for the first time, the reversibility of Sb2S3/Au (SP-HESD) detector is demonstrated here via simulation, by its capability to detect 'L' telecom wavelength band, (1565-1625) nm, when Sb2S3 is in the crystalline state and 'O' band, 1260-1360 nm, when Sb2S3 is switched to the amorphous phase.