Pronounced oxygen segregation in helium-implanted Czochralski silicon, Cz-Si:He, treated at 10001400K under atmospheric or enhanced, up to 1.2E9Pa, hydrostatic pressure, HP, is observed. Annealing of hydrogen-implanted Cz-Si:H at 720920 K - 1E5Pa also results in the oxygen accumulation in the damaged volume while no accumulation is detected at 1GPa and at 1230K. The HP effect on transformation of post-implantation defects and on oxygen diffusivity can be responsible for oxygen accumulation in Cz-Si:(He, H).
Effect of stress on accumulation of oxygen in silicon implanted with helium and hydrogen
2002
Abstract
Pronounced oxygen segregation in helium-implanted Czochralski silicon, Cz-Si:He, treated at 10001400K under atmospheric or enhanced, up to 1.2E9Pa, hydrostatic pressure, HP, is observed. Annealing of hydrogen-implanted Cz-Si:H at 720920 K - 1E5Pa also results in the oxygen accumulation in the damaged volume while no accumulation is detected at 1GPa and at 1230K. The HP effect on transformation of post-implantation defects and on oxygen diffusivity can be responsible for oxygen accumulation in Cz-Si:(He, H).File in questo prodotto:
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