The anomalous current-voltage characteristics of strain-balanced multi-quantum well solar cells grown on InP, were correlated with the electrical properties of extended defects generated by the local breakdown of the highly strained sequence of InGaAs layers. The analysis of Electron Beam Induced Current images reveals that the charge collection efficiency is enhanced at the boundaries of the extended defects when carriers are generated in the depletion region. The bright EBIC contrast is found to be due to the local partial compensation of a notch in the valence band at the heterointerface between the p and the i region.
EBIC study of extended defects in InGaAs/InGaAs strain-balanced MQWs for thermophotovoltaic applications
Mazzer M;Nasi L;Salviati G;Lazzarini L;
2003
Abstract
The anomalous current-voltage characteristics of strain-balanced multi-quantum well solar cells grown on InP, were correlated with the electrical properties of extended defects generated by the local breakdown of the highly strained sequence of InGaAs layers. The analysis of Electron Beam Induced Current images reveals that the charge collection efficiency is enhanced at the boundaries of the extended defects when carriers are generated in the depletion region. The bright EBIC contrast is found to be due to the local partial compensation of a notch in the valence band at the heterointerface between the p and the i region.File in questo prodotto:
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