An experimental study of the ion yield dependence on the incident energy (0.4–2.2 keV) for Ne+ isotopes scattered at 120° from pure gallium and indium targets has been carried out by mass-resolved ion-scattering spectrometry. For both two targets, the ion yield curves exhibited a broad maximum below 0.8–1 keV (with a lower position for Ne+ on In) followed by a monotonous decrease yield without any oscillatory features. The energy dependence of ion-survival probability was explained as a complex interplay of the Auger neutralization with the characteristic velocity vc=(0.9±0.1)×107 cm/s for Ne+ on Ga, and the collision-induced neutralization and reionization. The later ones were significant processes at the energies larger than 0.8–1.0 keV or, in terms of the distance of closest approach, d0.5–0.55 Å; the collision-induced neutralization was more effective than the inverse process. No visible influence of isotope effect on charge exchange was found. The ion-survival probability versus the inverse ion velocity displayed an independence on the mass of Ne+ projectiles.

Dependence of scattered ion yield on the incident energy: Ne+ on pure gallium and indium

Daolio S;Pagura C;
2003

Abstract

An experimental study of the ion yield dependence on the incident energy (0.4–2.2 keV) for Ne+ isotopes scattered at 120° from pure gallium and indium targets has been carried out by mass-resolved ion-scattering spectrometry. For both two targets, the ion yield curves exhibited a broad maximum below 0.8–1 keV (with a lower position for Ne+ on In) followed by a monotonous decrease yield without any oscillatory features. The energy dependence of ion-survival probability was explained as a complex interplay of the Auger neutralization with the characteristic velocity vc=(0.9±0.1)×107 cm/s for Ne+ on Ga, and the collision-induced neutralization and reionization. The later ones were significant processes at the energies larger than 0.8–1.0 keV or, in terms of the distance of closest approach, d0.5–0.55 Å; the collision-induced neutralization was more effective than the inverse process. No visible influence of isotope effect on charge exchange was found. The ion-survival probability versus the inverse ion velocity displayed an independence on the mass of Ne+ projectiles.
2003
Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia - ICMATE
531
95
102
Ion scattering
MARISS
SIMS
Semiconductors
I.F. 2.140 Questo lavoro è finalizzato a validare sul piano teorico e pratico la spettrometria di ioni scatterati filtrata in massa (MARISS Mass resolved ion scattering spectrometry) come tecnica quantitativa nel campo dei semiconduttori. Il lavoro dirime una questione annosa, dove dati risalenti ai primi anni 80, che attribuendo una dipendenza della resa ionica dalla energia di bombardamento non monotonica e con fenomeni oscillatori tendeva a far trascurare le interessanti proprietà applicative di queste misure. La tecnica in oggetto è infatti sensibile al primo monolayer del campione e ha una potenziale risoluzione in profondità di ordine nanometrico
2
info:eu-repo/semantics/article
262
Tolstogouzov A; Daolio S; Pagura C; Greenwood; C L
01 Contributo su Rivista::01.01 Articolo in rivista
none
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/52970
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact