Photoluminescence (PL) and piezoelectric photothermal (PPT) measurements were carried out at 80 K on two different ZnS epilayers grown by using diethyldisulphide (Et2S2) and dimethyldisulphide (Mt2S2) sulphur precursors. The sample made by Mt2S2 showed deep centers acting in both nonradiative and radiative recombination processes, whilst the sample grown using the Et2S2 sulphur precursor showed deep centers involved only in radiative recombination processes, as a possible consequence of the lower growth temperature required by the Et2S2 precursor.
Intrinsic defects of ZnS epitaxial layers grown by MOVPE
Prete P;
2002
Abstract
Photoluminescence (PL) and piezoelectric photothermal (PPT) measurements were carried out at 80 K on two different ZnS epilayers grown by using diethyldisulphide (Et2S2) and dimethyldisulphide (Mt2S2) sulphur precursors. The sample made by Mt2S2 showed deep centers acting in both nonradiative and radiative recombination processes, whilst the sample grown using the Et2S2 sulphur precursor showed deep centers involved only in radiative recombination processes, as a possible consequence of the lower growth temperature required by the Et2S2 precursor.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
