In this work we quantify the impact of dots size and dots number fluctuations on the programming window dispersion of multi-nanocrystal memory devices. Concerning dots size distribution, experimental imaging (i.e. transmission electron microscopy) is used and generalized assumptions are made, according to well known theoretical distributions. Concerning dots number distribution, a Poisson dispersion is assumed. Both a Monte Carlo simulation and a deep theoretical analysis (i.e. compound distributions theory) are exploited to assess in two different ways the overall results. Eventually clear guidelines, concerning dot density and dot distribution requirements, are provided for future memory generations.
Influence of dots size and dots number fluctuations on the electrical characteristics of multi-nanocrystal memory devices
Lombardo S
2003
Abstract
In this work we quantify the impact of dots size and dots number fluctuations on the programming window dispersion of multi-nanocrystal memory devices. Concerning dots size distribution, experimental imaging (i.e. transmission electron microscopy) is used and generalized assumptions are made, according to well known theoretical distributions. Concerning dots number distribution, a Poisson dispersion is assumed. Both a Monte Carlo simulation and a deep theoretical analysis (i.e. compound distributions theory) are exploited to assess in two different ways the overall results. Eventually clear guidelines, concerning dot density and dot distribution requirements, are provided for future memory generations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
