The experimental characterisation of a 38 GHz micromachined GaAs receiver is presented. The structure monolithically integrates a double-folded slot antenna and a Schottky diode on the same GaAs thin membrane. The measurements demonstrate that this approach has the potential for innovative circuit architecture development.

Experimental characterisation of 38 GHz micromachined GaAs receiver

Marcelli R;
2005

Abstract

The experimental characterisation of a 38 GHz micromachined GaAs receiver is presented. The structure monolithically integrates a double-folded slot antenna and a Schottky diode on the same GaAs thin membrane. The measurements demonstrate that this approach has the potential for innovative circuit architecture development.
2005
Istituto per la Microelettronica e Microsistemi - IMM
Micromachined Gallium arsenide receivers
Monolithic integration
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/53346
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