In this work the synthesis and characterisation of ZrxTi1-xO2 (ZT) grown via a non conventional MOCVD apparatus on both silicon and platinum coated substrates are described. The samples have been chemically, morphologically and structurally characterised by AFM, XRD, SEM + FEG and XPS. Also high and low frequencies electrical characterisation has been performed to evaluate a possible application of such materials as high-k dielectrics. (C) 2003 Elsevier B.V. All rights reserved.
ZT thin films produced by metal organic-chemical vapour deposition to be used as high-k dielectrics
INGO, GABRIEL MARIA;CUSMA' PICCIONE CADETTO, ANTONIO;MEZZI, ALESSIO;WATTS, BERNARD ENRICO;PADELETTI, GIUSEPPINA
2004
Abstract
In this work the synthesis and characterisation of ZrxTi1-xO2 (ZT) grown via a non conventional MOCVD apparatus on both silicon and platinum coated substrates are described. The samples have been chemically, morphologically and structurally characterised by AFM, XRD, SEM + FEG and XPS. Also high and low frequencies electrical characterisation has been performed to evaluate a possible application of such materials as high-k dielectrics. (C) 2003 Elsevier B.V. All rights reserved.File in questo prodotto:
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