The optical properties of blue InGaN-based light-emitting diodes aged at high current levels have been studied by electroluminescence and cathodoluminescence. The onset of a broad optical band peaked at about 3.1 eV in devices aged without a heat sink (junction temperature higher than 300 °C) has been correlated to an electrothermal threshold effect. The band is attributed to the dissociation of Mg-H complexes inside the p-type layers and to the consequent formation of Mg-related metastable complexes acting as acceptors. Subsequent electron-beam irradiation determines the almost complete quenching of the band.

Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress

2004

Abstract

The optical properties of blue InGaN-based light-emitting diodes aged at high current levels have been studied by electroluminescence and cathodoluminescence. The onset of a broad optical band peaked at about 3.1 eV in devices aged without a heat sink (junction temperature higher than 300 °C) has been correlated to an electrothermal threshold effect. The band is attributed to the dissociation of Mg-H complexes inside the p-type layers and to the consequent formation of Mg-related metastable complexes acting as acceptors. Subsequent electron-beam irradiation determines the almost complete quenching of the band.
2004
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Cathodoluminescence
Electrical stresses
Electron-beam irradiation
Electrothermal degradation
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/53600
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