Photodetectors are of great interest in several technological applications thanks to their capability to convert an optical signal into an electrical one through light-matter interaction.In particular ,broadband photodetectors based on graphene /silicon heterojunctions could be useful in multiple applications due to their compelling performance. Here we present a 2D photodiode haterojunctio based on graphene single layer deposited on p-type and n-type Silicon substrate.

Investigation of Graphene Single Layer on P-Type and N-Type Silicon Heterojunction Photodetectors

Vettoliere A.;Pannico M.;Crisci T.;Ruggiero B.;Silvestrini P.;Valentino M.
2024

Abstract

Photodetectors are of great interest in several technological applications thanks to their capability to convert an optical signal into an electrical one through light-matter interaction.In particular ,broadband photodetectors based on graphene /silicon heterojunctions could be useful in multiple applications due to their compelling performance. Here we present a 2D photodiode haterojunctio based on graphene single layer deposited on p-type and n-type Silicon substrate.
2024
Istituto di Scienze Applicate e Sistemi Intelligenti "Eduardo Caianiello" - ISASI
Istituto per i Polimeri, Compositi e Biomateriali - IPCB
photodetectors; heterojunction; graphene
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/536362
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