We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schrodinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electrostatics along the ribbon length. Band-bending and doping effects strongly influence the transport properties, giving rise to conductance asymmetries and a selective suppression of the subband formation. Junction electrostatics and p-type characteristics drive the conduction mechanism in the case of high-work-function Au, Pd, and Pt electrodes while contact resistance becomes dominant in the case of Al.

Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions

Deretzis I;La Magna A
2010

Abstract

We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schrodinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electrostatics along the ribbon length. Band-bending and doping effects strongly influence the transport properties, giving rise to conductance asymmetries and a selective suppression of the subband formation. Junction electrostatics and p-type characteristics drive the conduction mechanism in the case of high-work-function Au, Pd, and Pt electrodes while contact resistance becomes dominant in the case of Al.
2010
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
82
161413-1
161413-4
http://prb.aps.org/abstract/PRB/v82/i16/e161413
Sì, ma tipo non specificato
4
info:eu-repo/semantics/article
262
Deretzis, I; Fiori, G; Iannaccone, G; La Magna, A
01 Contributo su Rivista::01.01 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/53638
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