Interface kinetics plays a crucial role in modulating the resistive switching mechanism for memristor devices with a Schottky junction. This study introduces H atoms by catalytic doping and examines the interfacial electrical transfer characteristics of the Pd/Nb-doped SrTiO3 (Nb-STO). The I–V measurements show that H+ doping at the Pd/Nb-STO interface reduces the barrier height by 300 mV compared to the sample before H+ doping. This reduction in barrier height is further correlated with the decrease in built-in potential by 300 mV and depletion layer thickness from C–V measurements. The underlying reason for such a drastic change in resistive switching characteristics is the reduction of interface layer thickness. The work highlights the easy use of Pd metal to introduce H atoms to oxide materials and provides insight into their effects on switching mechanisms.
Hydrogen Atom Doping—A Versatile Method for Modulated Interface Resistive Switching
Davidson, Bruce A.;
2022
Abstract
Interface kinetics plays a crucial role in modulating the resistive switching mechanism for memristor devices with a Schottky junction. This study introduces H atoms by catalytic doping and examines the interfacial electrical transfer characteristics of the Pd/Nb-doped SrTiO3 (Nb-STO). The I–V measurements show that H+ doping at the Pd/Nb-STO interface reduces the barrier height by 300 mV compared to the sample before H+ doping. This reduction in barrier height is further correlated with the decrease in built-in potential by 300 mV and depletion layer thickness from C–V measurements. The underlying reason for such a drastic change in resistive switching characteristics is the reduction of interface layer thickness. The work highlights the easy use of Pd metal to introduce H atoms to oxide materials and provides insight into their effects on switching mechanisms.| File | Dimensione | Formato | |
|---|---|---|---|
|
ACSAEMVanka030122_hydrogen_ResistiveSwitching.pdf
solo utenti autorizzati
Tipologia:
Versione Editoriale (PDF)
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
4.52 MB
Formato
Adobe PDF
|
4.52 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
|
aelm.202200353.pdf
accesso aperto
Descrizione: This is the peer reviewed version of the following article: Adv. Electron. Mater. 2022, 8, 2200353, which has been published in final form at https://doi.org/10.1002/aelm.202200353. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.
Tipologia:
Documento in Post-print
Licenza:
Altro tipo di licenza
Dimensione
2.9 MB
Formato
Adobe PDF
|
2.9 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
