We report measurements of stimulated emission and single pass light amplification in Si nanocrystals obtained by ion implantation. We argue that population inversion involves Si=O interface states.
Optical gain in silicon nanocrystals
2001
Abstract
We report measurements of stimulated emission and single pass light amplification in Si nanocrystals obtained by ion implantation. We argue that population inversion involves Si=O interface states.File in questo prodotto:
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