The issue of intermodulation distortion in superconducting devices for rf and microwave applications is discussed. The classical frequency conversion theory for nonlinear two-port devices in the small signal limit is shown to apply to microstrip resonators regardless of their geometry and material. Two tone, third order intermodulation measurements allow more sensitive detection of nonlinearity compared to surface impedance measurements, provided a low noise, spurious free experimental setup is adopted. Measurements carried out on high quality Nb meanderline microstrip resonators show that at very low power level nonlinearity is dominated by intrinsic device properties. Film defects start to play a predominant role above a critical power level that strongly depends on the defect's nature.
Intermodulation measurements in Nb superconducting microstrip resonators
R MONACO;
2000
Abstract
The issue of intermodulation distortion in superconducting devices for rf and microwave applications is discussed. The classical frequency conversion theory for nonlinear two-port devices in the small signal limit is shown to apply to microstrip resonators regardless of their geometry and material. Two tone, third order intermodulation measurements allow more sensitive detection of nonlinearity compared to surface impedance measurements, provided a low noise, spurious free experimental setup is adopted. Measurements carried out on high quality Nb meanderline microstrip resonators show that at very low power level nonlinearity is dominated by intrinsic device properties. Film defects start to play a predominant role above a critical power level that strongly depends on the defect's nature.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
