Here we propose to exploit the natural instability of thin solid films, i.e. solid state dewetting, to form regular patterns of monocrystalline atomically smooth Si, Si1-xGex and Ge nanostructures that cannot be realized with conventional methods. Additionally, the solid-state dewetting dynamics is guided by prepatterning the sample by a combination of electron-beam lithography and reactive-ion etching, obtaining precise control over number, size, shape, and relative position of the final structures. Methods and structures will be optimized towards their exploitation mainly in photonic devices application (e.g. anti-reflection coatings, colour-filters, random lasers, quantum emitters and photonic sensors).

Solid state dewetting of semiconductor thin films: From fundamental studies to photonic applications

Freddi, Sonia
Primo
;
Sfuncia, Gianfranco;Nicotra, Giuseppe;Brescia, Arianna;Fedorov, Alexey;Bollani, Monica
2024

Abstract

Here we propose to exploit the natural instability of thin solid films, i.e. solid state dewetting, to form regular patterns of monocrystalline atomically smooth Si, Si1-xGex and Ge nanostructures that cannot be realized with conventional methods. Additionally, the solid-state dewetting dynamics is guided by prepatterning the sample by a combination of electron-beam lithography and reactive-ion etching, obtaining precise control over number, size, shape, and relative position of the final structures. Methods and structures will be optimized towards their exploitation mainly in photonic devices application (e.g. anti-reflection coatings, colour-filters, random lasers, quantum emitters and photonic sensors).
2024
Istituto di fotonica e nanotecnologie - IFN - Sede Milano
Istituto per la Microelettronica e Microsistemi - IMM - Sede Secondaria UniCatania
the solid-state dewetting, GeSi island
File in questo prodotto:
File Dimensione Formato  
Solid state dewetting of semiconductor thin films epjconf_eosam2024_05013.pdf

accesso aperto

Tipologia: Versione Editoriale (PDF)
Licenza: Creative commons
Dimensione 322.77 kB
Formato Adobe PDF
322.77 kB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/554069
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact