We investigate the thermoelectric properties of a one-dimensional quantum system in the presence of an external driving. We employ Floquet scattering theory to calculate linear-response stationary thermoelectric figures of merit in a single-channel conductor subjected to a periodically varying deltalike potential barrier. We also include a step barrier in one of the leads as a model of a nanoscale inhomogeneous semiconducting system. In the absence of a step barrier, we found that external driving can significantly enhance the Seebeck coefficient, particularly at low temperatures, with a relative increase of up to 200% at high frequencies compared to the static case. In the presence of a step barrier, we found that the thermoelectric Onsager coefficient for the driven case is also enhanced compared to the static case, with a significant photon-assisted effect at low temperatures when the chemical potential is within the semiconductor's gap. Our results demonstrate that external driving can be used to tune and enhance the thermoelectric capabilities of low-electron-density nanodevices.

Enhanced thermoelectric effects in a driven one-dimensional system

Alessandro Braggio
Secondo
Supervision
;
Fabio Taddei
Ultimo
Supervision
2025

Abstract

We investigate the thermoelectric properties of a one-dimensional quantum system in the presence of an external driving. We employ Floquet scattering theory to calculate linear-response stationary thermoelectric figures of merit in a single-channel conductor subjected to a periodically varying deltalike potential barrier. We also include a step barrier in one of the leads as a model of a nanoscale inhomogeneous semiconducting system. In the absence of a step barrier, we found that external driving can significantly enhance the Seebeck coefficient, particularly at low temperatures, with a relative increase of up to 200% at high frequencies compared to the static case. In the presence of a step barrier, we found that the thermoelectric Onsager coefficient for the driven case is also enhanced compared to the static case, with a significant photon-assisted effect at low temperatures when the chemical potential is within the semiconductor's gap. Our results demonstrate that external driving can be used to tune and enhance the thermoelectric capabilities of low-electron-density nanodevices.
2025
Istituto Nanoscienze - NANO
Quantum transport, Thermoelectric effects, Transport phenomena, 1-dimensional systems, Nanowires, Thermoelectrics, Tunnel junctions, S-matrix method in transport
File in questo prodotto:
File Dimensione Formato  
f9m9-197v.pdf

accesso aperto

Tipologia: Versione Editoriale (PDF)
Licenza: Creative commons
Dimensione 976.41 kB
Formato Adobe PDF
976.41 kB Adobe PDF Visualizza/Apri
2506.22329v2.pdf

accesso aperto

Tipologia: Documento in Pre-print
Licenza: Altro tipo di licenza
Dimensione 621.02 kB
Formato Adobe PDF
621.02 kB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/560012
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact