Photoluminescence (PL) spectra of InP epilayers grown and treated by plasma assisted MOCVD processes are presented. Defect passivation by hydrogen and microclustering are the main plasma related phenomena.

Enhanced photoluminescence from InP deposited and treated by remote plasma processes

1997

Abstract

Photoluminescence (PL) spectra of InP epilayers grown and treated by plasma assisted MOCVD processes are presented. Defect passivation by hydrogen and microclustering are the main plasma related phenomena.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/5648
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