Photoluminescence (PL) spectra of InP epilayers grown and treated by plasma assisted MOCVD processes are presented. Defect passivation by hydrogen and microclustering are the main plasma related phenomena.
Enhanced photoluminescence from InP deposited and treated by remote plasma processes
1997
Abstract
Photoluminescence (PL) spectra of InP epilayers grown and treated by plasma assisted MOCVD processes are presented. Defect passivation by hydrogen and microclustering are the main plasma related phenomena.File in questo prodotto:
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