A remote RF (13.56 MHz) plasma source, assembled on a metalorganic chemical vapour deposition (MOCVD) system, was used to investigate the processes of (a) cleaning and passivation of InP substrates with H atoms (H-2 plasmas), (b) deposition of InP epilayers from In(CH3)(3) and PHx radicals (PH3/H-2 plasmas), and (c) deposition of InN on sapphire from In(CH3)(3) and N atoms (N-2-H-2-Ar plasmas). From kinetic and spectroscopic ellipsometric in situ analysis, the removal of native oxide from InP surface was found to be complete, without surface damage (phosphorus depletion), at 230 degrees C and 7 min of H atoms exposure. The growth of InP epilayers with PH3 plasma pre-activation was successful (stoichiometric InP) even at low V/III ratio. During InN growth, the use of optical emission spectroscopy (OES) and of in situ ellipsometry (SE) was determinant for the process control.
On the use of remote RF plasma source to enhance III-V MOCVD technology
M Losurdo;
1997
Abstract
A remote RF (13.56 MHz) plasma source, assembled on a metalorganic chemical vapour deposition (MOCVD) system, was used to investigate the processes of (a) cleaning and passivation of InP substrates with H atoms (H-2 plasmas), (b) deposition of InP epilayers from In(CH3)(3) and PHx radicals (PH3/H-2 plasmas), and (c) deposition of InN on sapphire from In(CH3)(3) and N atoms (N-2-H-2-Ar plasmas). From kinetic and spectroscopic ellipsometric in situ analysis, the removal of native oxide from InP surface was found to be complete, without surface damage (phosphorus depletion), at 230 degrees C and 7 min of H atoms exposure. The growth of InP epilayers with PH3 plasma pre-activation was successful (stoichiometric InP) even at low V/III ratio. During InN growth, the use of optical emission spectroscopy (OES) and of in situ ellipsometry (SE) was determinant for the process control.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
