Films of copper acetylide (Cu2C2) were grown electrochemically on copper and characterized by transmittance and reflectance techniques. The photoelectrochemical properties of the filmed electrodes in alkaline solution indicate that Cu2C2 behaves as a p-type semiconducting material (1.5 eV band gap). The photocurrents depend on film thickness and aging and high resistivity or recombination losses limit the quantum yield to some 4% for thicknesses of practical importance (250 nm).

Photoelectrochemistry of copper(I) acetylide films electrodeposited onto copper electrodes

Zotti G;Cattarin S;
1986

Abstract

Films of copper acetylide (Cu2C2) were grown electrochemically on copper and characterized by transmittance and reflectance techniques. The photoelectrochemical properties of the filmed electrodes in alkaline solution indicate that Cu2C2 behaves as a p-type semiconducting material (1.5 eV band gap). The photocurrents depend on film thickness and aging and high resistivity or recombination losses limit the quantum yield to some 4% for thicknesses of practical importance (250 nm).
File in questo prodotto:
File Dimensione Formato  
prod_235269-doc_59652.pdf

solo utenti autorizzati

Descrizione: Photoelectrochemistry of copper(I) acetylide films electrodeposited onto copper electrodes
Dimensione 549.5 kB
Formato Adobe PDF
549.5 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/5651
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact