This study explores the bulk and surface electronic band structure of the SnSbBiTe4 van der Waals (vdW) compound composed of septuple layer (SL) vdW blocks in which pnictogen atoms (Sb,Bi) share the same sublattice in a 50/50 ratio. We provide a characterization of the electronic structure of SnSbBiTe4 by means of core-level photoemission spectroscopy and angle-resolved photoemission spectroscopy, complementing experimental studies with density functional theory calculations.
Electronic structure of a p-type topological insulator SnSbBiTe4
L. Ferrari;P. M. Sheverdyaeva;O. De Luca;
2025
Abstract
This study explores the bulk and surface electronic band structure of the SnSbBiTe4 van der Waals (vdW) compound composed of septuple layer (SL) vdW blocks in which pnictogen atoms (Sb,Bi) share the same sublattice in a 50/50 ratio. We provide a characterization of the electronic structure of SnSbBiTe4 by means of core-level photoemission spectroscopy and angle-resolved photoemission spectroscopy, complementing experimental studies with density functional theory calculations.File in questo prodotto:
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