Topological semimetals, being characterized by symmetry-protected band crossings, represent a fascinating class of materials with extraordinary electronic properties. Type-II Dirac semimetals, featuring highly tilted Dirac cones, offer unique opportunities for both fundamental research and technological advancements. Platinum ditelluride (PtTe2) has emerged as a promising candidate for a type-II Dirac semimetal, exhibiting relevant properties for future spintronic and optoelectronic devices. While the existence of type-II Dirac cones in PtTe2 has been confirmed by cryogenic temperature angle-resolved photoemission spectroscopy (ARPES), practical applications necessitate their stability at ambient conditions. Here, we present a melt growth method for the synthesis of high-quality PtTe2 crystals and we perform ARPES characterization both at cryogenic and at room temperature, providing compelling evidence for the robust nature of its topological electronic structure under realistic operating conditions. This demonstration paves the way for the development of PtTe2-based devices leveraging its distinctive topological properties in practical settings.

Room Temperature Evidence of PtTe2 Topological Semimetal Character

Gardella M.
;
Massetti C.;Lamperti A.;Zacchigna M.;Benher Z. R.;Sheverdyaeva P. M.;Moras P.;Molle A.
2026

Abstract

Topological semimetals, being characterized by symmetry-protected band crossings, represent a fascinating class of materials with extraordinary electronic properties. Type-II Dirac semimetals, featuring highly tilted Dirac cones, offer unique opportunities for both fundamental research and technological advancements. Platinum ditelluride (PtTe2) has emerged as a promising candidate for a type-II Dirac semimetal, exhibiting relevant properties for future spintronic and optoelectronic devices. While the existence of type-II Dirac cones in PtTe2 has been confirmed by cryogenic temperature angle-resolved photoemission spectroscopy (ARPES), practical applications necessitate their stability at ambient conditions. Here, we present a melt growth method for the synthesis of high-quality PtTe2 crystals and we perform ARPES characterization both at cryogenic and at room temperature, providing compelling evidence for the robust nature of its topological electronic structure under realistic operating conditions. This demonstration paves the way for the development of PtTe2-based devices leveraging its distinctive topological properties in practical settings.
2026
Istituto per la Microelettronica e Microsistemi - IMM - Sede Secondaria Agrate Brianza
Istituto Officina dei Materiali - IOM -
Istituto di Struttura della Materia - ISM - Sede Secondaria Trieste
ARPES
Platinum Ditelluride (PtTe2)
topological semimetals
type-II Dirac cones
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/578101
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