The contents of columns 2 and 4 of Table 1 are exchanged. Column 2 reports the carrier effective mass values pertaining to ref 11 instead of ref 1. Column 4 reports the carrier effective mass values pertaining to ref 1 instead of ref 11. Therefore, in the revised version, column 2 contains values reported in ref 1 and column 4 contains values reported in ref 11. (2) The name of row 7 should be mh (9 V) instead of me (9 V); namely, the values reported in the row refer to the hole effective mass and not to the electron effective mass. In the revised version, row 7 refers correctly to the hole effective mass.

Erratum: Addressing the Fundamental Electronic Properties of Wurtzite GaAs Nanowires by High-Field Magneto-Photoluminescence Spectroscopy (Nano Lett. (2017) 17:11 (6540-6547) DOI: 10.1021/acs.nanolett.7b02189)

Rubini S.;Martelli F.;
2021

Abstract

The contents of columns 2 and 4 of Table 1 are exchanged. Column 2 reports the carrier effective mass values pertaining to ref 11 instead of ref 1. Column 4 reports the carrier effective mass values pertaining to ref 1 instead of ref 11. Therefore, in the revised version, column 2 contains values reported in ref 1 and column 4 contains values reported in ref 11. (2) The name of row 7 should be mh (9 V) instead of me (9 V); namely, the values reported in the row refer to the hole effective mass and not to the electron effective mass. In the revised version, row 7 refers correctly to the hole effective mass.
2021
Istituto Officina dei Materiali - IOM -
Istituto per la Microelettronica e Microsistemi - IMM
nanowires, GaAs, Wurtzite
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/579721
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