Highly Efficient Current‐Induced Torques Originating from Topological Surface States in Sb2Te3

Topological insulators (TIs) have shown great promise for the development of energy-efficient and ultra-fast spintronic devices leveraging charge-spin interconversion (CSIC) mechanisms. Among them, chalcogenide-based TIs stand out for their compatibility with wafer-scale growth techniques. Recent studies have validated the topological properties of Sb2Te3 thin films grown via metal–organic chemical vapor deposition on 4-inch wafers. To advance Sb2Te3-based devices toward practical applications, CSIC efficiency must be evaluated under charge current injection in miniaturized electronic devices. The present study investigates spin-orbit torque (SOT) and magnetoresistive responses in Sb2Te3/Au/Co/Au. Measurements reveal the high SOT efficiency acting on Co and originating from Sb2Te3, equivalent to a spin Hall angle up to 62.8 ± 3.2, and a spin Hall conductivity up to 3.6 ± 0.2 × 106 (Formula presented.). These findings underscore the potential of the Sb2Te3 TI as a leading candidate for efficient spintronic devices, providing a solid foundation for its integration into novel functional devices.