Cuprous oxide (Cu2O) is an intrinsic p-type semiconductor representing an interesting, potential hole transporting material in 3rd generation solar cells. However, its practical applications are significantly limited by its intrinsically high resistivity. In the present study, we show that polycrystalline Cu2O thin films with an extra-low resistivity of 0.16 Ω cm can be grown by radio frequency (RF) sputtering by exploiting the effects of nitrogen and hydrogen doping. Significantly and differently from previous studies, the films are deposited at room temperature and the material doping is performed through the simultaneous introduction of both dopants in the Cu2O films during the growth process. The effects of N and H dopants on the Cu2O properties are investigated by performing resistivity, Hall effect, UPS, X-ray Diffraction and Raman measurements on a pristine Cu2O film, on Cu2O films doped with N and H individually, as well as on films containing both dopants. Such a systematic investigation of the doping effects permits to perform a comparative analysis of the achieved results and data from literature and to develop an exhaustive, interpretative framework that clarifies the role of native defects and N and H dopants in reducing the resistivity of Cu2O.
Extra-low resistivity in N and H doped Cu2O thin films grown by room temperature RF sputtering
Di Trolio A.;Latino P. M.;Paci B.;Generosi A.;Cricenti A.;Luce M.;Di Carlo A.;Filippone F.;Amore Bonapasta A.
2026
Abstract
Cuprous oxide (Cu2O) is an intrinsic p-type semiconductor representing an interesting, potential hole transporting material in 3rd generation solar cells. However, its practical applications are significantly limited by its intrinsically high resistivity. In the present study, we show that polycrystalline Cu2O thin films with an extra-low resistivity of 0.16 Ω cm can be grown by radio frequency (RF) sputtering by exploiting the effects of nitrogen and hydrogen doping. Significantly and differently from previous studies, the films are deposited at room temperature and the material doping is performed through the simultaneous introduction of both dopants in the Cu2O films during the growth process. The effects of N and H dopants on the Cu2O properties are investigated by performing resistivity, Hall effect, UPS, X-ray Diffraction and Raman measurements on a pristine Cu2O film, on Cu2O films doped with N and H individually, as well as on films containing both dopants. Such a systematic investigation of the doping effects permits to perform a comparative analysis of the achieved results and data from literature and to develop an exhaustive, interpretative framework that clarifies the role of native defects and N and H dopants in reducing the resistivity of Cu2O.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
