The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers. We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ratios, with conduction band offsets as high as 0.75 eV for Se-rich interfaces, and as low as 0.26 eV for Zn-rich interfaces.
Tuning of ZnSe-GaAs band discontinuities in heterojunction diodes
Vittorio Pellegrini;Fabio Beltram;Lucia Sorba;Silvia Rubini;Marco Lazzarino;Alfonso Franciosi;
1996
Abstract
The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers. We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ratios, with conduction band offsets as high as 0.75 eV for Se-rich interfaces, and as low as 0.26 eV for Zn-rich interfaces.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
