A lot of work has been carried out to prepare chemically homogeneous (100) silicon surfaces. The hydrogen-terminated (100) silicon surfaces are the most promising ones, especially in view of their remarkable environmental stability. The simplest way to produce hydrogen-terminated surfaces (attack in water solution of HF of a sacrificial, thermally grown, oxide) results in strongly heterogeneous rough surfaces (although with prevailing dihydride terminations). These surfaces can, however, be flattened and homogenized by treating them in H-2 at high temperature ( > 850 degrees C). The morphological and chemical changes undergone by the surface during the treatment are studied X-ray photoelectron spectroscopy, atomic force microscopy, scanning tunnelling microscopy, infrared absorption spectroscopy in the attenuated total reflection mode, reflection high energy electron diffraction and thermal programmed desorption, and the mechanisms responsible for them are discussed.

An example of chemistry-morphology interaction: making up for the geometric and energetic heterogeneities of the (100)surface of single crystalline silicon by high-temperature treatments in H-2

Jones D;Palermo V
2005

Abstract

A lot of work has been carried out to prepare chemically homogeneous (100) silicon surfaces. The hydrogen-terminated (100) silicon surfaces are the most promising ones, especially in view of their remarkable environmental stability. The simplest way to produce hydrogen-terminated surfaces (attack in water solution of HF of a sacrificial, thermally grown, oxide) results in strongly heterogeneous rough surfaces (although with prevailing dihydride terminations). These surfaces can, however, be flattened and homogenized by treating them in H-2 at high temperature ( > 850 degrees C). The morphological and chemical changes undergone by the surface during the treatment are studied X-ray photoelectron spectroscopy, atomic force microscopy, scanning tunnelling microscopy, infrared absorption spectroscopy in the attenuated total reflection mode, reflection high energy electron diffraction and thermal programmed desorption, and the mechanisms responsible for them are discussed.
2005
Istituto per la Sintesi Organica e la Fotoreattivita' - ISOF
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/637
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