We propose a method to characterize the main figures of merit of IR thermopile detectors by means of electrical measurements performed at the wafer level. Finite element simulations are adopted in order to compare the results of wafer-level measurements with the actual device responsivity as expected by optical measurements. The employed finite-element model is validated by comparison with experimental data obtained on a micromachined thermal test structure
Wafer-level testing of thermopile IR detectors
Mancarella F;Roncaglia A;Sanmartin M;Cardinali GC;
2005
Abstract
We propose a method to characterize the main figures of merit of IR thermopile detectors by means of electrical measurements performed at the wafer level. Finite element simulations are adopted in order to compare the results of wafer-level measurements with the actual device responsivity as expected by optical measurements. The employed finite-element model is validated by comparison with experimental data obtained on a micromachined thermal test structureFile in questo prodotto:
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