Disorder and spectral broadening of vertically stacked InGaAs/GaAs V-grooved quantum wires have been investigated by means of microprobe luminescence. We show that the main spectral broadening mechanism originates from monolayer fluctuations at the bottom of the wire. A direct evidence of monolayer height islands of area 40x40 nm formed at the bottom of the grooves is provided by atomic force microscopy. Lateral and vertical wire-to-wire fluctuations are found to be negligible on the micron scale.
Microphotoluminescence spectroscopy of vertically stacked InxGa1-xAs/GaAs quantum wires
A Passaseo;A Taurino;M Catalano;
1998
Abstract
Disorder and spectral broadening of vertically stacked InGaAs/GaAs V-grooved quantum wires have been investigated by means of microprobe luminescence. We show that the main spectral broadening mechanism originates from monolayer fluctuations at the bottom of the wire. A direct evidence of monolayer height islands of area 40x40 nm formed at the bottom of the grooves is provided by atomic force microscopy. Lateral and vertical wire-to-wire fluctuations are found to be negligible on the micron scale.File in questo prodotto:
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