Self-ordered InGaAs/GaAs quantum wires (QWRs) were obtained on (100) GaAs V-grooved substrates by low-pressure metal-organic vapor phase epitaxy. Different structural and optical properties of compressively strained InGaAs wires grown on grooves exhibiting (111)A-like and (311)-like oriented facets were investigated.
Fabrication and characterization of strained InGaAs quantum wires grown on high index V-grooved GaAs substrates by LP-MOVPE
Passaseo;M De Giorgi;M Catalano;A Taurino
1999
Abstract
Self-ordered InGaAs/GaAs quantum wires (QWRs) were obtained on (100) GaAs V-grooved substrates by low-pressure metal-organic vapor phase epitaxy. Different structural and optical properties of compressively strained InGaAs wires grown on grooves exhibiting (111)A-like and (311)-like oriented facets were investigated.File in questo prodotto:
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