There have been many papers reporting visible luminescence and light emission at 1.54 micron, at room temperature, from porous silicon (Psi) and from Erbium doped Psi, respectively. These results have stimulated a great deal of excitement, because they suggest the possibility of a silicon based optoelectronics technology. In this paper, in order to generate radiation at 1.54 micron in Psi, a diffferent approach based on Raman scattering is presented. This approach has important advantages: no special impurities are required, so samples realisation is simple and chip; moreover enhancement of Raman scattering and nonlinear effects in nanostructured porous silicon could be experienced. Finally preliminary experimental results of Raman emission in porous silicon at 1.54 micron are reported.
Raman emission in porous silicon at 1.54 micron
Sirleto L;
2004
Abstract
There have been many papers reporting visible luminescence and light emission at 1.54 micron, at room temperature, from porous silicon (Psi) and from Erbium doped Psi, respectively. These results have stimulated a great deal of excitement, because they suggest the possibility of a silicon based optoelectronics technology. In this paper, in order to generate radiation at 1.54 micron in Psi, a diffferent approach based on Raman scattering is presented. This approach has important advantages: no special impurities are required, so samples realisation is simple and chip; moreover enhancement of Raman scattering and nonlinear effects in nanostructured porous silicon could be experienced. Finally preliminary experimental results of Raman emission in porous silicon at 1.54 micron are reported.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
