We studied the passivation effect of plasma deposited intrinsic and doped hydrogenated amorphous silicon layers on industrial grade, n-type, 1 ?cm multicrystalline silicon, aimed at the fabrication of Heterojunction (HJ) solar cells based on such material. The investigated variables include the process temperature, hydrogen dilution of silane during the intrinsic layer deposition, and passivating layer thickness. The structure of the passivating layers was analysed by optical measurements. Surface photovoltage and quasi-steady state photoconductance were used to characterize untreated and treated wafers. Thin a-Si:H layers exhibited the best passivating performance.
Surface passivation of multi-Si for heterojunction solar cells
Canino M;Summonte C;
2008
Abstract
We studied the passivation effect of plasma deposited intrinsic and doped hydrogenated amorphous silicon layers on industrial grade, n-type, 1 ?cm multicrystalline silicon, aimed at the fabrication of Heterojunction (HJ) solar cells based on such material. The investigated variables include the process temperature, hydrogen dilution of silane during the intrinsic layer deposition, and passivating layer thickness. The structure of the passivating layers was analysed by optical measurements. Surface photovoltage and quasi-steady state photoconductance were used to characterize untreated and treated wafers. Thin a-Si:H layers exhibited the best passivating performance.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
