Lattice-matched, single and multiple InGaP/GaAs/InGaP quantum wells (QWs) were grown at 600 degreesC by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE), with the use of the tertiarybuthylarsine (TBAs) and tertiarybuthylphosphine (TBP) group-V sources. In order to enhance the interface abruptness, different gas switching sequences were exploited during the growth of the interface, and the best results were obtained by inserting a few monolayer-thick GaAsP interlayers (IL), at the direct GaAs-on-InGaP interface. Low-temperature photoluminescence (PL), high resolution X-ray diffraction, transmission electron microscopy and photoreflectance spectroscopy analysis were performed on the grown heterostructures, to correlate the adopted growth sequence with the interface properties and the QW optical transitions.
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
M Longo;C Bocchi;L Lazzarini;L Nasi;
2004
Abstract
Lattice-matched, single and multiple InGaP/GaAs/InGaP quantum wells (QWs) were grown at 600 degreesC by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE), with the use of the tertiarybuthylarsine (TBAs) and tertiarybuthylphosphine (TBP) group-V sources. In order to enhance the interface abruptness, different gas switching sequences were exploited during the growth of the interface, and the best results were obtained by inserting a few monolayer-thick GaAsP interlayers (IL), at the direct GaAs-on-InGaP interface. Low-temperature photoluminescence (PL), high resolution X-ray diffraction, transmission electron microscopy and photoreflectance spectroscopy analysis were performed on the grown heterostructures, to correlate the adopted growth sequence with the interface properties and the QW optical transitions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
