Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Films with the different values of the nitrogen content were deposited by varying the ratio of the flows of ammonia and silane in the horizontal tube reactor. The films were characterized in terms on the surface quality (by scanning electron microscopy), in terms of the nitrogen content x by time of flight elastic recoil detection analysis and by Raman and FTIR spectroscopy.
Low temperature deposition of SiNx thin films by the LPCVD method
Chiasera A;Ferrari M;Righini;
2011
Abstract
Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Films with the different values of the nitrogen content were deposited by varying the ratio of the flows of ammonia and silane in the horizontal tube reactor. The films were characterized in terms on the surface quality (by scanning electron microscopy), in terms of the nitrogen content x by time of flight elastic recoil detection analysis and by Raman and FTIR spectroscopy.File in questo prodotto:
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