The application of bias-stress with high source-drain voltage and negatiVe gate voltage (transistor in off-status) produces a marked reduction in the off-current as well as a transconductance degradation. These effects have been explained in terms of hotholes injection into the gate insulator and formation of interface states near the drain.
Hot Carriers Effects in Polycrystalline Silicon Thin-Film Transistors
L Mariucci;A Pecora;G Fortunato;
1992
Abstract
The application of bias-stress with high source-drain voltage and negatiVe gate voltage (transistor in off-status) produces a marked reduction in the off-current as well as a transconductance degradation. These effects have been explained in terms of hotholes injection into the gate insulator and formation of interface states near the drain.File in questo prodotto:
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