Hydrogenated amorphous silicon thin-film transistors have been fabricated by using electron-beam lithography to define channel length down to 0.2 um. In this way it has been possible to evidence, for the first time, shortchannel effects on these devices. In this work two short-channel effects occurring in 0.2 um devices are discussed: degradation of the off-current as the source-drain voltage is increased and avalanche increase of the drain current for high source-drain voltage.
Short-channel effects in 0.2 um channel length a-Si:H thin-film transistors fabricated by electron beam lithography
G Fortunato;L Mariucci;A Pecora
1991
Abstract
Hydrogenated amorphous silicon thin-film transistors have been fabricated by using electron-beam lithography to define channel length down to 0.2 um. In this way it has been possible to evidence, for the first time, shortchannel effects on these devices. In this work two short-channel effects occurring in 0.2 um devices are discussed: degradation of the off-current as the source-drain voltage is increased and avalanche increase of the drain current for high source-drain voltage.File in questo prodotto:
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